MMBFJ202 |
RFQ for MMBFJ202 Required Field |
 |
| Technical/Catalog Information | MMBFJ202 |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | - |
| Current - Drain (Idss) @ Vds (Vgs=0) | 900A @ 20V |
| Gate to Source Voltage (Vgs Max) | * |
| Input Capacitance (Ciss) @ Vds | - |
| Power - Max | 350mW |
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-23 |
| Voltage - Cutoff (VGS off) @ Id | 800mV @ 10nA |
| Voltage - Breakdown (V(BR)GSS) | 40V |
| Resistance - RDS(On) | - |
| Current Drain (Id) - Max | - |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | MMBFJ202 MMBFJ202 |
| Product | Manufacturers | Pack | D/C | |||||
| MMBFJ202 | - | - | - |
N-Channel General Purpose Amplifier
This device is designed primarily for low level audio and general purpose applications with high impedance signal sources. Sourced from Process 52.
|
Symbol |
Parameter |
Value |
Units |
|
VDG |
Drain-Gate Voltage |
40 |
V |
|
VGS |
Gate-Source Voltage |
-40 |
V |
|
IGF |
Forward Gate Current |
50 |
mA |
|
TJ ,Tstg |
Operating and Storage Junction Temperature Range |
-55 to +150 |
°C |
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations
